sot - 89 - 3l 1. base 2. collector 3. emitter transistor (npn) features ? small flat package ? high speed switching time ? low collector - emitter saturation voltage ? complementary to 2sa1213 applications ? power amplifier and switching maximum ratings (t a =25 unless otherwise noted) electrical characteristics ( t a =25 unless otherwise specified ) p arameter symbol test conditions min typ max unit collector - base breakd own voltage v (br) cbo i c = 100 a ,i e =0 50 v c ollector - emitter breakdown voltage v (br) ceo i c = 1 ma , i b =0 50 v emitter - base breakdown voltage v (br) e b o i e = 100 a ,i c =0 5 v collector cut - off current i cbo v cb = 5 0 v,i e =0 0. 1 a emitter cut - off current i ebo v e b = 5 v,i c =0 0. 1 a h fe (1) v ce =2 v , i c =0.5 a 70 240 dc current gain h fe (2) v ce =2 v , i c =2 a 20 collector - emitter saturation voltage v ce(sat) i c =1 a ,i b = 50m a 0. 5 v base - emitter saturation voltage v b e(sat) i c =1 a ,i b = 50m a 1.2 v transition frequency f t v ce = 2 v,i c = 0.5 a 120 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 30 pf classification of h fe (1) rank o y range 70 C 140 120 C 240 marking mo my symbol parameter value unit v cbo collector - b ase v oltage 50 v v ceo collector - e mitter v oltage 50 v v ebo emitter - b ase v oltage 5 v i c collector c urrent 2 a p c collector p ower d issipation 500 m w r ja thermal resistance from junc tion to ambient 250 / w t j junction t emperature 150 t stg s torage t emperature - 55~+150 2s c 2873 1 www.htsemi.com semiconductor jinyu
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